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Method of making a double heterostructure laser

Patent ·
OSTI ID:6711530
A method is described of fabricating a laser which includes a body of semiconductor material including end facets and a substrate, and having a guide layer and an active layer which taper in thickness in the lateral direction, which method comprises the steps of: forming corrugations comprising adjacent vee-shaped channels in a major surface of the substrate and which extend between the end facets; forming a first solution, comprising the elements to be deposited and an element which is also a solvent for the substrate material, having a super-saturated growth condition for planar and concave surfaces and an under-saturated growth condition for convex surfaces; contacting the surface of the substrate having the corrugations therein to the first solution thereby causing a melting of the convex portions of the corrugations to form a plurality of mesas between the concave portions of the corrugations. The surfaces of the mesas are below the surface of the substrate, thereby forming a trough in the surface of the substrate and causing deposition of a first layer to occur over the concave portions of the corrugations and the mesas and the surrounding substrate; and sequentially contacting the substrate with the first layer thereon to different solutions to deposit the remaining layers of the laser over the surface of the first layer.
Assignee:
RCA Corp., Princeton, NJ
Patent Number(s):
US 4642143
OSTI ID:
6711530
Country of Publication:
United States
Language:
English

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