Unstable resonator diode laser

Patent · Tue Apr 19 04:00:00 EDT 1988

OSTI ID:6949354

Clark, G L

In a semiconductor diode laser, a structure is described comprising: a generally planar active layer, across which a forward bias voltage is applied, cladding layers adjacent to the active layer, to confine light in a direction perpendicular to the active layer, and first and second facets; in which the first facet is curved to present a concave part-cylindrical reflective surface toward the active layer, and in which the second facet includes a curved portion presenting a convex part-cylindrical reflective surface toward the active layer and a planar portion that is non-reflective. The curvatures of the two curved surfaces have axes of curvature that are approximately perpendicular to the active layer, the curvatures being selected to form an unstable resonator, in which light is confined in a particular sense by the cladding layers and from which energy is out-coupled through the planar portion of the second facet.

• Assignee: TRW Inc., Redondo Beach, CA
• Patent Number(s): US 4739508
• OSTI ID: 6949354
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CLADDING
DEPOSITION
DESIGN
ELECTROMAGNETIC RADIATION
ELECTRONIC EQUIPMENT
EQUIPMENT
FABRICATION
LASERS
LAYERS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
RADIATIONS
REFLECTIVITY
RESONATORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SURFACE COATING
SURFACE PROPERTIES
VISIBLE RADIATION