Evolutionary phase diagrams for plasma-enhanced chemical vapor deposition of silicon thin films from hydrogen-diluted silane

Journal Article · Fri Oct 01 00:00:00 EDT 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.124992· OSTI ID:689937

Koh, J; Ferlauto, A S; Rovira, P I; Wronski, C R; Collins, R W ^[1]

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1. Center for Thin Film Devices and Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

Real-time optical studies have been applied to develop phase diagrams that characterize plasma-enhanced chemical vapor deposition (PECVD) of silicon thin films at low temperature (200&hthinsp;{degree}C). The deposition phase diagrams describe regimes over which predominantly amorphous and microcrystalline Si phases are obtained as a function of the accumulated thickness and the hydrogen-to-silane gas flow ratio R=[H{sub 2}]/[SiH{sub 4}] in the PECVD process. The diagrams for different substrates provide insights into optimization of amorphous Si materials and solar cells. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 689937
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 75; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
AMORPHOUS STATE
CHEMICAL VAPOR DEPOSITION
ELLIPSOMETRY
HYDROGEN
PHASE DIAGRAMS
POLYCRYSTALS
SILANES
SILICON
SOLAR CELLS
THIN FILMS