Chemical vapor deposition of hydrogenated amorphous silicon from disilane

Journal Article · Sun Oct 01 04:00:00 EDT 1989 · Journal of the Electrochemical Society; (USA)

DOI:https://doi.org/10.1149/1.2096383· OSTI ID:5122810

Bogaert, R J; Russell, T W.F.; Klein, M T ^[1]; Rocheleau, R E; Baron, B N ^[2]

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1. Delaware Univ., Newark, DE (USA). Dept. of Chemical Engineering
2. Delaware Univ., Newark, DE (USA). Inst. of Energy Conversion

The authors describe hydrogenated amorphous silicon (a-Si:H) thin films deposited at growth rates of 1 to 30 A/s by chemical vapor deposition (CVD) from disilane source gas at 24 torr total pressure in a tubular reactor. The effects of substrate temperature and gas holding time (flow rate) on film growth rate and effluent gas composition were measured at temperatures ranging from 360{sup 0} to 485{sup 0}C and gas holding times from 3 to 62s. Effluent gases determined by gas chromatography included silane, disilane and other higher order silanes. A chemical reaction engineering model, based on a silylene (SiH/sub 2/) insertion gas phase reaction network and film growth from both SiH/sub 2/ and high molecular weight silicon species, Si/sub n/H/sub 2n/, was developed. The model predictions were in good agreement with experimentally determined growth rates and effluent gas compositions.

• OSTI ID: 5122810
• Journal Information: Journal of the Electrochemical Society; (USA), Journal Name: Journal of the Electrochemical Society; (USA) Vol. 136:10; ISSN 0013-4651; ISSN JESOA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
AMORPHOUS STATE
CHEMICAL COATING
CHEMICAL COMPOSITION
CHEMICAL REACTIONS
CHEMICAL REACTORS
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH METHODS
DEPOSITION
ELEMENTS
FILMS
FLOW RATE
HYDRIDES
HYDROGEN COMPOUNDS
HYDROGENATION
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SURFACE COATING
THIN FILMS