Gas-phase reaction study of disilane pyrolysis: Applications to low pressure chemical vapor deposition

Journal Article · Mon Aug 01 04:00:00 EDT 1994 · Journal of the Electrochemical Society; (United States)

DOI:https://doi.org/10.1149/1.2055074· OSTI ID:7017783

Johannes, J E; Ekerdt, J G ^[1]

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1. Univ. of Texas, Austin, TX (United States). Dept. of Chemical Engineering

The gas-phase thermal reactions during disilane decomposition at low pressure chemical vapor deposition conditions were studied from 300 to 1,000 K using resonance enhanced multiphoton ionization (REMPI) and multiphoton ionization (MPI). REMPI of gas-phase Si, mass 28, was detected from 640 to 840 K and 1 to 10 Torr, with a maximum signal intensity between 700 to 720 K. During disilane decomposition, no SiH (427.8 nm), SiH[sub 2] (494-515 nm), or SiH[sub 3] (419.0 nm) was detected. MPI of higher silanes, silenes, and silylenes were detected through mass fragments 2, 32, and 60; these species reached a maximum signal intensity 20 degrees prior to the mass-28 maximum. Modeling studies that included a detailed low pressure gas-phase kinetic scheme predict relative gas-phase partial pressures generated during disilane pyrolysis. The model predicted experimental trends in the Si partial pressure and the higher silane, silene, and silylene partial pressures.

• OSTI ID: 7017783
• Journal Information: Journal of the Electrochemical Society; (United States), Journal Name: Journal of the Electrochemical Society; (United States) Vol. 141:8; ISSN 0013-4651; ISSN JESOAN
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
CHEMICAL COATING
CHEMICAL REACTION KINETICS
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
DECOMPOSITION
DEPOSITION
ELEMENTS
HYDRIDES
HYDROGEN COMPOUNDS
KINETICS
MATHEMATICAL MODELS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PYROLYSIS
REACTION KINETICS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SURFACE COATING
THERMOCHEMICAL PROCESSES