Plasma enhanced chemical vapor deposition of silicon sulfide and phosphorus sulfide thin films
- Univ. of California, Santa Barbara, CA (United States). Dept. of Chemistry
Amorphous SiS{sub x}:H (x {approximately}2) films have been synthesized from H{sub 2}S and SiH{sub 4} precursors using a remote plasma enhanced chemical vapor deposition apparatus. Structural studies by solid state nuclear magnetic resonance (NMR) and Raman scattering reveal that the atomic environments in these materials are similar to those observed in melt-quenched silicon sulfide glasses, and are characterized by corner- and edge-shared SiS{sub 4/2} tetrahedra. Compared to these glasses, however, the films show consistently higher fractions of corner-sharing SiS{sub 4/2} tetrahedra. The ratio of corner- to edge-sharing tetrahedra and the Si:S ratio can be influenced by the H{sub 2}S/SiH{sub 4} flow rate ratio during deposition. Thus, PECVD opens up wider opportunities for structural tailoring of amorphous silicon sulfide materials than currently possible by means of the melt-quenching method. Preliminary data for the PECVD synthesis of phosphorus sulfide is also presented.
- OSTI ID:
- 51617
- Report Number(s):
- CONF-940411--; ISBN 1-55899-246-4
- Country of Publication:
- United States
- Language:
- English
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