Hydrogen incorporation in silicon thin films deposited with a remote hydrogen plasma

Journal Article · Mon May 08 04:00:00 EDT 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.101264· OSTI ID:6299738

Johnson, N M; Walker, J; Doland, C M; Winer, K; Street, R A

Results are presented on the effects of growth conditions on hydrogen incorporation in Si thin films deposited with a remote hydrogen plasma. Oxygen contamination of the films was significantly reduced by replacement of the quartz tube that is commonly used to contain the hydrogen plasma with an alumina tube, with a concomitant increase in the electrical conductivity of P-doped a-Si:H films. Hydrogen incorporation was examined with a remote deuterium plasma and downstream injection of SiH/sub 4/. As the gas flow ratio D/sub 2/:SiH/sub 4/ increases, the ratio D:H in the film changes as a consequence of the increasing flux of D at the growing surface. High silane dilution also promotes the formation of microcrystalline silicon, which itself affects H incorporation.

• Research Organization: Xerox Palo Alto Research Center, Palo Alto, California 94304
• OSTI ID: 6299738
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:19; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
360603* -- Materials-- Properties
AMORPHOUS STATE
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CONTAMINATION
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRIC DISCHARGES
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
GLOW DISCHARGES
IMPURITIES
PHYSICAL PROPERTIES
PLASMA
SEMIMETALS
SILICON
SURFACE COATING
THIN FILMS