New results of nc-Si:H films prepared by hydrogen-diluted silane in a triode PECVD system
Book
·
OSTI ID:527649
- Nanjing Univ. (China)
- National Inst. for Advanced Interdisciplinary Research, Tsukuba, Ibaraki (Japan)
- Electrotechnical Lab., Tsukuba, Ibaraki (Japan)
The authors report new results on microstructures and electronic properties of nanocrystalline silicon (nc-Si:H) films prepared by a triode PECVD method with a hydrogen diluted silane plasma. The transition from a-Si:H to nc-Si:H was obtained by varying the ratio of H{sub 2} to SiH{sub 4} while the bias of the grid electrode was fixed at 100 V with respect to the substrate. The threshold value of [H{sub 2}]/[H{sub 2}] + [SiH{sub 4}] is about 93.3%. With increasing value of [H{sub 2}]/[H{sub 2}] + [SiH{sub 4}], the volume fraction of crystallinity in nc-Si:H films increased from 12% to 50%, while the average grain size remained constant. This is quite different from the structures of samples prepared by the conventional diode PECVD with H{sub 2} dilution. The traveling-wave technique was applied to study the transport properties of nc-Si:H films, and experimental results confirmed percolation transport in nc-Si:H films.
- OSTI ID:
- 527649
- Report Number(s):
- CONF-960401--; ISBN 1-55899-323-1
- Country of Publication:
- United States
- Language:
- English
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