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Ion and radical reactions in the silane glow discharge deposition of a-Si:H films

Journal Article · · Plasma Chem. Plasma Process.; (United States)
DOI:https://doi.org/10.1007/BF00566858· OSTI ID:5244170

A mass spectrometric analysis of the positive ions and neutral products in a silane glow discharge has been performed. The active species, created by dissociation, disproportionation, and ion-molecule reactions are mainly SiH/sub 2/, SiH/sub 3/, and H. A calculation of the distribution of the SiH/sup +/ /SUB n/ ions shows that the silane concentration monitors the abundance of SiH/sup +//sub 3/. diffusional transport of radicals toward the discharge-tube walls can explain the observed deposition rates. The study of SiH/sub 4/-SiD/sub 4/ and SiH/sub 4/-D/sub 2/ plasmas emphasizes several reactions which modify the free-radical populations depending on the discharge conditions: disproportionation, termination, recombination, and abstration. Heterogeneous reactions have also been observed: etching of the film by H atoms and direct incorporation of hydrogen in the growing film. A general scheme for the plasma deposition mechanism is proposed.

Research Organization:
Univ. de Nantes, Nantes
OSTI ID:
5244170
Journal Information:
Plasma Chem. Plasma Process.; (United States), Journal Name: Plasma Chem. Plasma Process.; (United States) Vol. 2:1; ISSN PCPPD
Country of Publication:
United States
Language:
English