Neutral radical deposition from silane discharges

Journal Article · Fri Apr 01 04:00:00 EST 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341034· OSTI ID:5417942

Gallagher, A

The fractional contributions of the various SiH/sub n/ radicals (n = 0--3) to deposition are calculated for low-power, pure-silane rf and dc discharges. This is done using a radical diffusion plus reaction equation, combined with current knowledge of SiH/sub 4/ dissociation fractionation, of SiH/sub n/+SiH/sub 4/ reactions, and of the distributed source of radicals. The conclusion reached is that more than 98% of neutral radical deposition is by SiH/sub 3/ for typical deposition pressures (>100 mT at 240 /sup 0/C). The effect of SiH/sub 3/+SiH/sub 3/ reactions at higher power is also evaluated using an estimated reaction rate coefficient (k/sub 3/). The resulting loss in deposition rate is given as a function of film growth rate and of k/sub 3/.

• Research Organization: Joint Institute for Laboratory Astrophysics, National Bureau of Standards and University of Colorado, Boulder, Colorado 80309-0440
• OSTI ID: 5417942
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:7; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ARGON IONS
CHARGED PARTICLES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DISSOCIATION
ELEMENTS
HYDRIDES
HYDROGEN COMPOUNDS
IONS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PLASMA
RADICALS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SURFACE COATING