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Gas-phase free radical reactions in the glow-discharge deposition of hydrogenated amorphous silicon from silane and disilane

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.334378· OSTI ID:6067537

An analysis of a measurement by Matsuda and co-workers of the lifetimes of the free radicals involved in the glow-discharge deposition of amorphous hydrogenated silicon from silane and disilane at 20-mTorr pressure is consistent with the hypothesis that SiH or SiH/sub 2/, but not SiH/sub 3/, is the dominant radical in the deposition from silane at that pressure.

Research Organization:
Division of Metallurgy and Materials Science, Brookhaven National Laboratory, Upton, New York 11973
DOE Contract Number:
AC02-76CH00016
OSTI ID:
6067537
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 57:6; ISSN JAPIA
Country of Publication:
United States
Language:
English