Glow discharge deposition at high rates using disilane
The research program reported makes use of the fact that amorphous silicon films can be grown faster from disilane in a glow discharge than from the traditional silane. The goal is to find a method to grow films at a high rate and with sufficiently high quality to be used in an efficient solar cell. It must also be demonstrated that the appropriate device structure can be successfully fabricated under conditions which give high deposition rates. High quality intrinsic films have been deposited at 20 A/s. Efficiency of 5.6% on steel substrates and 5.3% on glass substrates were achieved using disilane i-layers deposited at 15 A/s in a basic structure, without wide-gap doped layers or light trapping. Wide gap p-layers were deposited using disilane. Results were compared with those obtained at Vactronic using high power discharges of silane-hydrogen mixtures. (LEW)
- Research Organization:
- Brookhaven National Lab., Upton, NY (USA)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 5872272
- Report Number(s):
- BNL-36269; CONF-8503106-1; ON: DE85010236
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
ALLOYS
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC DISCHARGES
ELEMENTS
EQUIPMENT
FABRICATION
GLASS
GLOW DISCHARGES
HYDRIDES
HYDROGEN COMPOUNDS
IRON ALLOYS
IRON BASE ALLOYS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
STEELS
SUBSTRATES