Diagnostics of glow discharges used to produce hydrogenated amorphous silicon films. Subcontract report, 15 April 1984-14 April 1985
Measurements of monosilane and disilane radicals were made at the surface of dc glow discharges (GD) in pure silane and silane-argon mixtures. These observations were interpreted as discharge kinetic models. It was inferred that the dominant radical, SiH/sub 3/, is produced in the gas and is primarily responsible for film growth. The heavier radicals observed in the gas appear to be a consequence of surface reactions, as is the disilane, a major product of the monosilane decomposition. A detailed model of the ion chemistry in the discharge was formulated to derive theoretical distributions of ions at the cathodes of low-pressure dc discharges. Chemical vapor deposition (CVD) rates of silane and disilane, measured previously in the laboratory, have now also been interpreted in detail to yield a self-consistent model for the CVD process. This model identifies and quantifies the role of H/sub 2/ as an inhibitor of silane GD and CVD deposition. Implications of these discoveries to deposition rates and film properties are discussed.
- Research Organization:
- National Bureau of Standards, Boulder, CO (USA)
- DOE Contract Number:
- AC02-83CH10093
- OSTI ID:
- 5280500
- Report Number(s):
- SERI/STR-211-2760; ON: DE85016847
- Country of Publication:
- United States
- Language:
- English
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Diagnostics of glow discharges used to produce hydrogenated amorphous silicon films: Annual subcontract report, 15 April 1986-14 June 1987
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Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
AMORPHOUS STATE
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELECTRIC DISCHARGES
ELECTRIC POTENTIAL
ELEMENTS
GLOW DISCHARGES
HYDRIDES
HYDROGEN COMPOUNDS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PLASMA DIAGNOSTICS
PRODUCTION
RADICALS
RAMAN SPECTRA
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SPECTRA
SURFACE COATING