Amorphous silicon photovoltaic devices prepared by chemical and photochemical vapor deposition of higher order silanes. Annual subcontract progress report, 1 September 1984-31 August 1985

Technical Report · Thu Oct 31 23:00:00 EST 1985

DOI:https://doi.org/10.2172/6334977· OSTI ID:6334977

Delahoy, A. E.; Ellis, Jr., F. B.

This report describes the preparation of hydrogenated amorphous silicon (a-Si:H) films and photovoltaic devices by chemical vapor deposition (CVD) from higher order silanes and the properties of such films and devices. The research explored new deposition techniques that could produce a-Si:H superior to that achieved by the glow-discharge method. For example, the improvement could stem from ease of deposition (lower cost and/or better reproducibility), from material improvement (higher efficiency and/or better stability under illumination), or from innovative materials that improve device performance. Research focused on photo-CVD techniques; thermal CVD deemphasized. This report presents results for deposition by mercury-sensitized decomposition of disilane. These results indicate that this technique is a very promising alternative to the glow-discharge method.

• Research Organization: Chronar Corp., Princeton, NJ (USA)
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6334977
• Report Number(s): SERI/STR-211-2765; ON: DE85016881
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRIC DISCHARGES
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
FABRICATION
GLOW DISCHARGES
HYDRIDES
HYDROGEN COMPOUNDS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SPUTTERING
SURFACE COATING