Photovoltaic devices using a-Si:H from higher order silanes. Final subcontract report, September 1, 1983-August 31, 1984

Technical Report · Fri Mar 01 04:00:00 EST 1985

DOI:https://doi.org/10.2172/5537720· OSTI ID:5537720

Delahoy, A. E.

This report describes the preparation of hydrogenated amorphous silicon (a-Si:H) films and photovoltaic devices by chemical vapor deposition (CVD) from higher silanes, and the properties of such films and devices. The motivation for this research is the prospect of preparing by a new technique a-Si:H having electronic properties similar (or superior) to material prepared by the well-known glow discharge technique. Possible advantages of thermal CVD are the absence of ion bombardment, high deposition rates, efficient utilization of feedstock gases, lower levels of impurity incorporation, absence of pinholes, and greater material stability. Photochemical vapor deposition of a-Si:H from disilane is also described and has yielded higher efficiency solar cells than thermal CVD.

• Research Organization: Chronar Corp., Princeton, NJ (USA)
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 5537720
• Report Number(s): SERI/STR-211-2637; ON: DE85008804
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DESIGN
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
FABRICATION
HYDRIDES
HYDROGEN COMPOUNDS
HYDROXIDES
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SILICON HYDROXIDES
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING