GaAs nanostructures and films deposited by a Cu-vapor laser

Journal Article · Fri Oct 01 04:00:00 EDT 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.124966· OSTI ID:689934

Dinh, L N; Hayes, S; Saw, C K; McLean, W II; Balooch, M ^[1]; Reimer, J A ^[2]

---

1. Lawrence Livermore National Laboratory, Livermore, California 94551 (United States)
2. Lawrence Berkeley National Laboratory and Department of Chemical Engineering, University of California, Berkeley, California 94720 (United States)

The properties of GaAs nanoclusters and films deposited on substrates by a Cu-vapor laser were investigated. Nanoclusters of GaAs were produced by laser ablating a GaAs target in an Ar background gas. X-ray diffraction and transmission electron microscopy revealed that these GaAs nanoclusters had randomly oriented crystalline cores and As-rich amorphous oxide outer shells. These clusters assembled, upon vacuum annealing, along step edges and at defects on substrates to form wire-like structures. Our results also showed that GaAs films, when deposited in vacuum, did not have crystalline cores and were rich in As. Postdeposition annealing in vacuum to between 400 and 500&hthinsp;{degree}C drove off the excess As. The stoichiometry of the films was confirmed by both Auger electron spectroscopy and x-ray photoelectron spectroscopy. {copyright} {ital 1999 American Institute of Physics. }

• OSTI ID: 689934
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 75; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABLATION
ANNEALING
ATOMIC CLUSTERS
AUGER ELECTRON SPECTROSCOPY
GALLIUM ARSENIDES
MICROSTRUCTURE
PHOTOELECTRON SPECTROSCOPY
STOICHIOMETRY
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION