Study of substrate diffusion in epitaxial n-type CdSe films grown on GaAs (001) by pulsed laser ablation

Technical Report · Wed Apr 01 04:00:00 EST 1998

DOI:https://doi.org/10.2172/672107· OSTI ID:672107

Park, J ^[1]; Rouleau, C M; Lowndes, D H ^[2]

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1. Univ. of Tennessee, Knoxville, TN (United States)
2. Oak Ridge National Lab., TN (United States). Solid State Div.

N-type CdSe films with thicknesses of 470--630 nm were grown on (001) and 2{degree}-miscut GaAs wafers by ArF (193 nm) pulsed laser ablation of stoichiometric CdSe targets at platen temperatures (T{sub p}) of 250--425 C in vacuum and ambient Ar gas. Film-substrate interdiffusion was studied with Auger depth profiling, as well as energy dispersive x-ray fluorescent spectroscopy (EDS). Both techniques showed that extensive interdiffusion took place at the film-substrate interface for CdSe films grown at T{sub p} {ge} 355 C but was greatly reduced at T{sub p} = 250 C. Tilting the substrate to be approximately parallel to the ablation plume as well as decreasing the ambient gas pressure also reduced film-substrate interdiffusion.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: USDOE Office of Energy Research, Washington, DC (United States)
• DOE Contract Number: AC05-96OR22464
• OSTI ID: 672107
• Report Number(s): ORNL/CP--97498; CONF-980405--; ON: DE98004888
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AUGER ELECTRON SPECTROSCOPY
CADMIUM SELENIDES
EXPERIMENTAL DATA
GALLIUM ARSENIDES
INTERFACES
SELF-DIFFUSION
SUBSTRATES
VAPOR PHASE EPITAXY
X-RAY SPECTROSCOPY