Reactive-ion-beam etching of InP in a chlorine--hydrogen mixture

Journal Article · Tue Nov 01 04:00:00 EST 1994 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.587515· OSTI ID:6893624

Vawter, G A; Ashby, C I.H. ^[1]

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1. Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185-0603 (United States)

We present the first application of Cl[sub 2]+H[sub 2] reactive-ion-beam etching of InP. Specularly smooth etching is achieved using an ion beam of 53%--73% Cl[sub 2] in H[sub 2] at a 300 eV extraction potential with the substrate held at 250 [degree]C. InP etch morphology and rate are examined as functions of Cl[sub 2]+H[sub 2] mixture, sample temperature, and chamber pressure. Significant deviation from the optimum smooth-etch conditions are seen to result in rough surfaces.

• DOE Contract Number: AC04-94AL85000
• OSTI ID: 6893624
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 12:6; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
BEAMS
CHLORINE
ELECTRIC DISCHARGES
ELEMENTS
ENERGY RANGE
ETCHING
EV RANGE
EV RANGE 100-1000
HALOGENS
HIGH-FREQUENCY DISCHARGES
HYDROGEN
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
ION BEAMS
NONMETALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SURFACE FINISHING
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
TEMPERATURE RANGE 0400-1000 K