Characterization of chemically assisted ion beam etching of InP
Journal Article
·
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
- Univ. of Illinois, Urbana, IL (United States); and others
Chemically assisted ion beam etching involving an Ar ion beam and a Cl{sub 2} ambient was investigated for the etching of high quality facets in InP. Detailed investigations on how the etch anisotropy as well as the surface morphology could be optimized under different etch conditions were performed. It was necessary to elevate the subtrate temperature above 150{degrees}C to obtain smooth surfaces and above 225{degrees}C to achieve good anisotropy. At these elevated temperatures, very high etch rates in excess of 2 {mu}m/min were obtained due to the micromasking effects. Hard baked photoresist and Ti masks were used to obtain surfaces free of {open_quotes}grasslike{close_quotes} roughness. Free standing InP wires in various widths were fabricated to estimated the extent of sidewall damage under different etch conditions. 12 refs., 6 figs.
- OSTI ID:
- 263456
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 6 Vol. 12; ISSN 0734-211X; ISSN JVTBD9
- Country of Publication:
- United States
- Language:
- English
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