Radical beam ion-beam etching of InAlAs/InP using Cl{sub 2}
Journal Article
·
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
- Univ. of California, Santa Barbara, CA (United States)
- Hewlett-Packard Lab., Palo Alto, CA (United States)
A Cl{sub 2} radical beam ion-beam etching (RBIBE) system was used to etch InP-based materials. InAlAs/InAlGaAs heterostructures, vertical sidewalls, smooth surfaces, and no delineation of the epilayers resulted from etching at elevated temperatures (>150{degrees}C) and low ion-beam energies (<300 eV). Rapid etch rates (>1 {mu}m/min) were also achieved under these conditions. This work demonstrates that reliable anisotropic and angled etching of Inp-based III-V compound semiconductors is possible with the RBIBE system. 6 refs., 6 figs.
- OSTI ID:
- 263460
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 6 Vol. 12; ISSN JVTBD9; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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