Cl{sub 2}+Ar reactive-ion-beam etching of InGaAlAs for smooth, low- damage definition of asymmetric Fabry-Perot optical transmission modulators
Conference
·
OSTI ID:253354
Cl{sub 2}+Ar Reactive-Ion-Beam Etching is demonstrated for anisotropic, low-damage etching of InAlGaAs semiconductor alloys for use as optical transmission modulators at 1.32 {mu}m wavelength.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 253354
- Report Number(s):
- SAND--96-1481C; CONF-960502--18; ON: DE96011713
- Country of Publication:
- United States
- Language:
- English
Similar Records
Smooth, low-damage, definition of InGaAlAs asymmetric Fabry-Perot optical transmission modulators by Cl{sub 2}+Ar reactive-ion-beam etching
Radical beam ion-beam etching of InAlAs/InP using Cl{sub 2}
Surface damage on GaAs induced by reactive ion etching and sputter etching
Conference
·
Wed Jan 31 23:00:00 EST 1996
·
OSTI ID:203216
Radical beam ion-beam etching of InAlAs/InP using Cl{sub 2}
Journal Article
·
Mon Oct 31 23:00:00 EST 1994
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
·
OSTI ID:263460
Surface damage on GaAs induced by reactive ion etching and sputter etching
Technical Report
·
Mon Mar 31 23:00:00 EST 1986
·
OSTI ID:5032725