Smooth, low-damage, definition of InGaAlAs asymmetric Fabry-Perot optical transmission modulators by Cl{sub 2}+Ar reactive-ion-beam etching
Conference
·
OSTI ID:203216
Chlorine-argon-based reactive-ion-beam etching was used successfully to etch novel InGaAlAs (1.32 {mu}m-wavelength Fabry-Perot resonator transmission) modulators. Resulting etch is very smooth, anisotropic, and has low etch-induced (sidewall) damage. Use of this simple chemistry eliminates difficulties with polymer formation encountered in hydrocarbon-based etches.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 203216
- Report Number(s):
- SAND--96-0289C; CONF-960582--1; ON: DE96007342
- Country of Publication:
- United States
- Language:
- English
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