Dry etching of NiFe/Co and NiFe/Al-O/Co multilayers in an inductively coupled plasma of Cl{sub 2}/Ar mixture

Journal Article · Mon Nov 01 04:00:00 EST 2004 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.1806441· OSTI ID:20636780

Ra, H -W; Hahn, Y B; Song, K S; Park, M H; Hong, Y K ^[1]

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1. Nanomaterials Research Center and School of Chemical Engineering and Technology, Chonbuk National University, Chonju 561-756 (Korea, Republic of)

Dry etching of NiFe/Co and NiFe/Al-O/Co multilayers was carried out in inductively coupled Cl{sub 2}/Ar plasmas. An ion-enhanced etch mechanism took a critical role for desorption of chlorine etch products. NiFe/Al-O/Co showed a faster etch rate than NiFe/Co at various etch conditions. Anisotropic and smooth features were obtained using a photoresist mask. Sidewall contamination with etch products was observed at a higher Cl{sub 2} concentration (>50%). Postetch cleaning of the etched samples in deionized water reduced the chlorine residues substantially.

• OSTI ID: 20636780
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 6 Vol. 22; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ARGON
CHLORINE
COBALT
DESORPTION
ETCHING
ICP MASS SPECTROSCOPY
IRON ALLOYS
NICKEL ALLOYS
PLASMA
SURFACE CLEANING
SURFACE CONTAMINATION
WATER