Atomic layer etching of InP using a low angle forward reflected Ne neutral beam
- Department of Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do 440-746 (Korea, Republic of)
In this study, the atomic layer etching characteristics and the etch mechanism of (100) InP as functions of Cl{sub 2} pressure and Ne neutral beam irradiation dose were investigated. When Cl{sub 2} pressure and Ne neutral beam irradiation dose were lower than the critical values of 0.4 mTorr and 7.2x10{sup 15} at./cm{sup 2} cycle, respectively, the InP etch rate (A ring /cycle) and the InP surface roughness varied with Cl{sub 2} pressure and Ne neutral beam irradiation dose. However, when the Cl{sub 2} pressure and Ne neutral beam irradiation dose were higher than the critical values, the InP etch rate remained as 1.47 A ring /cycle, corresponding to one monolayer per cycle, and the surface roughness and the surface stoichiometry remained similar to those of InP before etching.
- OSTI ID:
- 20860604
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 89; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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