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Investigation of selected electrically active defects in polycrystalline silicon solar cell materials: Final subcontract report, 30 May 1986

Technical Report ·
DOI:https://doi.org/10.2172/6889508· OSTI ID:6889508

This report presents results of a study on techniques for producing silicon wafers for large-scale, terrestrial, solar energy applications: ESP (edge-supported pulling) silicon sheets and LASS (low angle silicon sheets). Correlations between electrical properties and structural and microstructural properties were investigated. Structural properties were analyzed using selected area electron channeling (SAEC); electrical properties were described by means of electron-beam-induced current (EBIC). The transmission electron microscope (TEM) was used to analyze microstructural properties. It was found that the LASS material was semirandomly oriented. In general, the growth direction was parallel to the (211) family of planes. EBIC results of the ESP material showed long, linear bands of poor electrical response. EBIC results of the LASS material showed poor electrical response along grain boundaries and near silicon inclusions and dislocation clusters. TEM results showed a predominance of twins and stacking faults in both the ESP and LASS materials. The LASS material also exhibited grain boundaries, dislocation networks, and precipitates. The poor electrical response may be related to the stacking faults, grain boundaries, and dislocation networks presumably formed by the mechanical pulling during sheet formation. However, the dislocation networks often appeared to act as gettering sites to tie up impurities and thereby improve the overall electrical response of the material.

Research Organization:
Florida Univ., Gainesville (USA). Dept. of Materials Science and Engineering; Solar Energy Research Inst., Golden, CO (USA)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6889508
Report Number(s):
SERI/STR-211-3083; ON: DE87001159
Country of Publication:
United States
Language:
English