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Structural and electrical characterization of polycrystalline semiconductor materials

Conference ·
OSTI ID:5394785
;

Secondary electron imaging, electron channeling and electron-beam-induced current (EBIC) are used alternately in a scanning electron microscope to characterize and correlate the morphology, crystallographic orientation, and electronic quality (types and spatial distribution of defects) of individual grains in polycrystalline semiconductor samples. The technique is discussed in some detail, and a number of applications and results in the study of edge-supported-pulling (ESP) silicon sheet and low-angle silicon sheet (LASS) materials are reported.

Research Organization:
Solar Energy Research Inst., Golden, CO (USA)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5394785
Report Number(s):
SERI/TP-213-2689; CONF-850421-13; ON: DE85012166
Country of Publication:
United States
Language:
English

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Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360603 -- Materials-- Properties
CHANNELING
CRYSTAL GROWTH METHODS
CRYSTALLOGRAPHY
CRYSTALS
DEFECTS
ELECTRON CHANNELING
ELECTRON MICROSCOPY
LASS GROWTH METHOD
MATERIALS
MICROSCOPY
MORPHOLOGY
POLYCRYSTALS
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SHEETS