Electron channeling and EBIC studies of polycrystalline silicon sheets
Conference
·
OSTI ID:6564631
Electron channeling and EBIC studies have been performed on silicon sheets grown by the edge-supported pulling (ESP) and low-angle silicon sheet (LASS) processes. We have found that the dominant grain structure of the ESP sheets is long, narrow grains with surface normals oriented near (011); grains with this structure tend to have better electronic quality than random grains. We have also studied the twin-stabilized planar growth material of LASS sheets. This material, grown at 200 cm/sup 2//min, is essentially single-crystal.
- Research Organization:
- Solar Energy Research Inst., Golden, CO (USA)
- DOE Contract Number:
- AC02-83CH10093
- OSTI ID:
- 6564631
- Report Number(s):
- SERI/TP-211-2319; CONF-840561-25; ON: DE84004515
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360603 -- Materials-- Properties
CHANNELING
CRYSTAL GROWTH METHODS
CRYSTALS
EBIC STUDIES
EDGE-SUPPORTED PULLING (ESP)
ELECTRON CHANNELING
ELECTRON MICROSCOPY
ELEMENTS
LASS GROWTH METHOD
LOW-ANGLE SILICON SHEET (LASS)
MICROSCOPY
POLYCRYSTALS
SCANNING ELECTRON MICROSCOPY
SEMIMETALS
SHEETS
SILICON
SILICON SHEETS
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360603 -- Materials-- Properties
CHANNELING
CRYSTAL GROWTH METHODS
CRYSTALS
EBIC STUDIES
EDGE-SUPPORTED PULLING (ESP)
ELECTRON CHANNELING
ELECTRON MICROSCOPY
ELEMENTS
LASS GROWTH METHOD
LOW-ANGLE SILICON SHEET (LASS)
MICROSCOPY
POLYCRYSTALS
SCANNING ELECTRON MICROSCOPY
SEMIMETALS
SHEETS
SILICON
SILICON SHEETS