Electron channeling and EBIC studies of polycrystalline silicon sheets

Conference · Tue May 01 00:00:00 EDT 1984

OSTI ID:6564631

Tsuo, Y S; Matson, R J

Electron channeling and EBIC studies have been performed on silicon sheets grown by the edge-supported pulling (ESP) and low-angle silicon sheet (LASS) processes. We have found that the dominant grain structure of the ESP sheets is long, narrow grains with surface normals oriented near (011); grains with this structure tend to have better electronic quality than random grains. We have also studied the twin-stabilized planar growth material of LASS sheets. This material, grown at 200 cm/sup 2//min, is essentially single-crystal.

• Research Organization: Solar Energy Research Inst., Golden, CO (USA)
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6564631
• Report Number(s): SERI/TP-211-2319; CONF-840561-25; ON: DE84004515
• Resource Relation: Conference: 17. IEEE photovoltaic specialists conference, Orlando, FL, USA, 1 May 1984; Other Information: Portions are illegible in microfiche products. Original copy available until stock is exhausted
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
SILICON
ELECTRON CHANNELING
SCANNING ELECTRON MICROSCOPY
LASS GROWTH METHOD
POLYCRYSTALS
SHEETS
CHANNELING
CRYSTAL GROWTH METHODS
CRYSTALS
ELECTRON MICROSCOPY
ELEMENTS
MICROSCOPY
SEMIMETALS
EBIC STUDIES
SILICON SHEETS
EDGE-SUPPORTED PULLING (ESP)
LOW-ANGLE SILICON SHEET (LASS)
140501* - Solar Energy Conversion- Photovoltaic Conversion
360603 - Materials- Properties