Bandfilling in metalorganic chemical vapor deposited Al/sub x/Ga/sub 1-x/As-GaAs-Al/sub x/Ga/sub 1-x/As quantum-well heterostructure lasers
Data are presented showing that quantum-well (L/sub z/approx.200 A) Al/sub x/Ga/sub 1-x/As-GaAs-Al/sub x/Ga/sub 1-x/As heterostructures, grown by metalorganic chemical vapor deposition, can be operated as lasers on confined-particle transitions over an unusually large range (..delta..lambda> or approx. =1000 A). The bandfilling properties of these quantum-well heterostructures, which can easily be excited to carrier densities as high as n> or approx. =10/sup 19//cm/sup 3/, are described. Quantum-well laser diodes (xapprox.0.5) are described that operate (300 K) from the GAMMA band edge to wavelengths as short as 7700 A (..delta..Eapprox.185 meV). Narrow photopumped samples (15--30 ..mu..m) are shown to operate (77 K) as lasers on clearly defined confined-particle transitions from the band edge to 6980 A (..delta..Eapprox.270 meV). On samples from another wafer, laser operation has been observed to 6885 A (..delta..Eequivalenth..nu..-E/sub g/=293 meV). The photoluminescence spectra of these heterostructures extend well into the region of the recently determined L band minima of GaAs.
- Research Organization:
- Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
- OSTI ID:
- 6883245
- Journal Information:
- J. Appl. Phys.; (United States), Vol. 49:11
- Country of Publication:
- United States
- Language:
- English
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