Gas source molecular beam epitaxy of Ga/sub x/In/sub 1//sub -x/P/sub y/As/sub 1//sub -y/
The use of P/sub 2/ and As/sub 2/ beams generated by several different beam sources for the growth of InP, GaAs, and Ga/sub x/In/sub 1-x/P/sub y/As/sub 1-y/ has been investigated. Accommodation coefficients for As/sub 2/ and P/sub 2/ were determined for heated GaAs and InP surfaces. It is demonstrated that a source utilizing decomposition of the hydrides over the range 200--2000 Torr and providing a leak of the resulting P/sub 2/, As/sub 2/, and H/sub 2/ molecules into a molecular beam epitaxy (MBE) system can be used for the growth of Ga/sub x/In/sub 1-x/P/sub y/As/sub 1-y/ layers lattice matched to InP. Heterostructure lasers emitting at 1.5 ..mu..m with room temperature threshold current densities of 2000 A/cm/sup 2/ and differential quantum efficiencies of 17%--19% were fabricated to demonstrate the quality of the epitaxy by this method. Initial studies of the cracking of AsH/sub 3/ and PH/sub 3/ at low pressures in contact with heated Ta suggest that Ta acts as a catalyst for the decomposition and that low pressure beam sources may also be useful for gas source MBE.
- Research Organization:
- AT and T Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 6875815
- Journal Information:
- J. Appl. Phys.; (United States), Vol. 55:10
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDES
MOLECULAR BEAM EPITAXY
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
SEMICONDUCTOR LASERS
EFFICIENCY
FABRICATION
THRESHOLD CURRENT
ARSENIC
ARSENIC COMPOUNDS
CATALYTIC CRACKING
CURRENT DENSITY
HETEROJUNCTIONS
HYDRIDES
HYDROGEN
PHOSPHORUS
PHOSPHORUS COMPOUNDS
TANTALUM
ARSENIDES
CHEMICAL REACTIONS
CRACKING
CURRENTS
DECOMPOSITION
ELECTRIC CURRENTS
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
HYDROGEN COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
LASERS
METALS
NONMETALS
PHOSPHIDES
PNICTIDES
PYROLYSIS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
THERMOCHEMICAL PROCESSES
TRANSITION ELEMENTS
420300* - Engineering- Lasers- (-1989)