Nonradiative recombination in InGaAsP/InP light sources causing light emitting diode output saturation and strong laser-threshold-current temperature sensitivity
Journal Article
·
· Appl. Phys. Lett.; (United States)
Nonradiative recombination with the rate strongly dependent on the injected carrier density n as ..cap alpha..n/sup 2en-dash4/ has been found to be the cause of the output saturation in 1.3-..mu..m InGaAsP/InP surface emitting double heterostructure light emitting diodes. It has been found that this nonradiative recombination is also responsible for the strong temperature sensitivity of InGaAsP/InP double heterostructure laser threshold current.
- Research Organization:
- Opto-Electronics Research Laboratories, Nippon Electric Co., Ltd. 4-1-1 Miyazaki, Takatsu-ku, Kawasaki 213, Japan
- OSTI ID:
- 6874398
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 38:4; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
LIGHT EMITTING DIODES
MATERIALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RECOMBINATION
SATURATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SURFACES
TEMPERATURE DEPENDENCE
WAVELENGTHS
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
LIGHT EMITTING DIODES
MATERIALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RECOMBINATION
SATURATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SURFACES
TEMPERATURE DEPENDENCE
WAVELENGTHS