Measurement of radiative and nonradiative recombination rates in InGaAsP and AlGaAs light sources

Journal Article · Wed Aug 01 04:00:00 EDT 1984 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1984.1072500· OSTI ID:5992558

Olshansky, R; Manning, J; Powazinik, W; Su, C B

A small signal method is used to measure the carrier lifetime as a function of injected carrier density, and the results are used to determine the radiative and nonradiative recombination rates for AlGaAs LED's and 1.3 ..mu..m InGaAsP lasers. For AlGaAs LED's the radiative recombination constant decreases with injected carrier density and the rate equation contains a small nonradiative Cn/sup 3/ term. The low internal efficiency of 1.3 ..mu..m InGaAsP lasers is found to be primarily caused by two factors: a radiative coefficient B(n) which strongly decreases with the injected carrier density, and CHHS Auger recombination having a recombination coefficient of 1-2 X 10/sup -29/cm/sup 6//s. A recombination term representing carrier leakage is observed in some devices, but it is not the principal cause of low internal efficiency.

• Research Organization: GTE Laboratories Inc., Waltham, MA 02254
• OSTI ID: 5992558
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-20:8; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
AUGER EFFECT
CARRIER DENSITY
CARRIER LIFETIME
CHEMICAL REACTION KINETICS
EFFICIENCY
EQUATIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
KINETIC EQUATIONS
KINETICS
LASERS
LIFETIME
LIGHT EMITTING DIODES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
REACTION KINETICS
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS