Measurement of radiative, Auger, and nonradiative currents in 1. 3-. mu. m InGaAsP buried heterostructure lasers
Journal Article
·
· Appl. Phys. Lett.; (United States)
Frequency response measurements are used to determine the carrier lifetime of 1.3-..mu..m InGaAsP buried heterostructure lasers between 1 mA and threshold. The data confirm previous results on the radiative and Auger recombination coefficients and reveal the presence of a nonradiative current which dominates at low currents and contributes 4 mA at threshold.
- Research Organization:
- GTE Laboratories, 40 Sylvan Road, Waltham, Massachusetts 02254
- OSTI ID:
- 6808990
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:6; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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OSTI ID:5476084
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· Appl. Phys. Lett.; (United States)
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· IEEE J. Quant. Electron.; (United States)
·
OSTI ID:5992558
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ALUMINIUM PHOSPHIDES
ARSENIC COMPOUNDS
ARSENIDES
AUGER EFFECT
CARRIER LIFETIME
CURRENTS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
FREQUENCY RESPONSE TESTING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INFRARED RADIATION
JUNCTIONS
LASERS
LIFETIME
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
TESTING
THRESHOLD CURRENT
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ALUMINIUM PHOSPHIDES
ARSENIC COMPOUNDS
ARSENIDES
AUGER EFFECT
CARRIER LIFETIME
CURRENTS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
FREQUENCY RESPONSE TESTING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INFRARED RADIATION
JUNCTIONS
LASERS
LIFETIME
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
TESTING
THRESHOLD CURRENT