Temperature dependence of threshold of InGaAsP/InP double-heterostructure lasers and Auger recombination

Journal Article · Sat Mar 14 23:00:00 EST 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92380· OSTI ID:6572009

Dutta, N K; Nelson, R J

We have calculated the nonradiative Auger recombination rate as a function of temperature in InGaAsP. Inclusion of this process can explain the observed temperature dependence of threshold and carrier lifetime of both the 1.3- and 1.55-..mu..m InGaAsP double-heterostructure lasers. The threshold calculations are carried out using the Halperin-Lax-Kane band model, Stern's matrix element, and Beattie-Landsberg theory of Auger recombination. Evidence of the Auger recombination is provided by a sublinearity of the spontaneous emission as a function of injection current.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6572009
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 38:6; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
AUGER EFFECT
BAND THEORY
CARRIER LIFETIME
CHARGE CARRIERS
DATA
ENERGY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
LIFETIME
MATHEMATICAL MODELS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE
THEORETICAL DATA
THRESHOLD ENERGY