Auger recombination in quantum-well InGaAsP heterostructure lasers

Journal Article · Fri Oct 01 00:00:00 EDT 1982 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1982.1071437· OSTI ID:5990470

Chiu, L C; Yariv, A

Interband nonradiative Auger recombination in quantum-well InGaAsP/InP heterostructure lasers has been calculated. It is found that the Auger rate is much reduced in the quasi two-dimensional quantum-well lasers. This suggests that the temperature sensitivity of quantum-well InGaAsP lasers is much less than ordinary structures with much higher values of T/sub 0/ at around room temperatures.

• Research Organization: Calif. Inst. of Technology, Pasadena, CA 91125
• OSTI ID: 5990470
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-18:10; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC
AUGER EFFECT
ELEMENTS
GALLIUM
HETEROJUNCTIONS
INDIUM
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
METALS
NONMETALS
PHOSPHIDES
PHOSPHORUS
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM ELECTRONICS
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
TEMPERATURE EFFECTS