Universal presence of saturable nonradiative currents in six types of 1. 3. mu. m buried heterostructure lasers

Journal Article · Mon Feb 29 04:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99351· OSTI ID:5476084

LaCourse, J; Olshansky, R

Measurement of the carrier lifetime below threshold reveals that the saturable nonradiative current reported previously for 1.3 ..mu..m vapor-phase-regrowth buried heterostructure lasers is a widespread problem in 1.3 ..mu..m InGaAsP buried heterostructure lasers. The saturable nonradiative current represents 10%--30% of the threshold current for most geometries and about 6% for buried crescent lasers. This nonradiative current is also responsible for low spontaneous output at very low currents.

• Research Organization: GTE Laboratories, 40 Sylvan Road, Waltham, Massachusetts 02254
• OSTI ID: 5476084
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:9; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CARRIER LIFETIME
CURRENTS
DATA
ELECTRIC CURRENTS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LASERS
LIFETIME
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THRESHOLD CURRENT