Low-threshold and wide-bandwidth 1. 3. mu. m InGaAsP buried crescent injection lasers with semi-insulating current confinement layers

Journal Article · Mon Jul 20 00:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98906· OSTI ID:6364093

Cheng, W H; Su, C B; Buehring, K D; Ure, J W; Perrachione, D; Renner, D; Hess, K L; Zehr, S W

A hybrid growth technique has been used to fabricate low-threshold, high-modulation bandwidth, and high-power 1.3 ..mu..m InGaAsP buried crescent injection lasers. The technique involves a first growth of an Fe-doped semi-insulating current confinement layer by low-pressure metalorganic chemical vapor deposition followed by a liquid phase epitaxy regrowth. The lasers have cw threshold currents as low as 10 mA at 25 /sup 0/C, total differential quantum efficiency over 50%, high-temperature operation up to 100 /sup 0/C, and output power more than 33 mW/facet. A 3-dB modulation bandwidth of 8.4 GHz has been achieved at 5 mW/facet.

• Research Organization: Rockwell International Corporation, Lightwave Systems Division, Dallas, Texas 75207
• OSTI ID: 6364093
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CURRENTS
DATA
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ENERGY
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INFRARED RADIATION
LASERS
LIQUID PHASE EPITAXY
NUMERICAL DATA
OPERATION
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POWER
QUANTUM EFFICIENCY
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING
THRESHOLD CURRENT
THRESHOLD ENERGY