Low threshold 1. 51. mu. m InGaAsP buried crescent injection lasers with semi-insulating current confinement layer

Journal Article · Sun Nov 23 23:00:00 EST 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97339· OSTI ID:5137622

Cheng, W H; Su, C B; Buehring, K D; Chien, C P; Ure, J W; Perrachione, D; Renner, D; Hess, K L; Zehr, S W

A hybrid growth technique has been used to fabricate low threshold 1.51 ..mu..m InGaAsP buried crescent injection lasers with a semi-insulating current confinement layer. The technique involves a first stage of low pressure metalorganic chemical vapor deposition followed by a liquid phase epitaxy stage. The lasers exhibit cw threshold currents as low as 12 mA at 25 /sup 0/C, high yield, differential quantum efficiency over 41%, and output power more than 18 mW. Small-signal modulation response to 3.5 GHz has been obtained. The lasers show an initial small degradation rate of 1%/kh at 50 /sup 0/C which gives an estimated operating lifetime of 47 years at 25 /sup 0/C.

• Research Organization: Rockwell International Corporation, Collins Transmission System Division, Dallas, Texas 75207
• OSTI ID: 5137622
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 49:21; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
CURRENTS
DATA
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
LIQUID PHASE EPITAXY
NUMERICAL DATA
OPERATION
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POWER
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING
THRESHOLD CURRENT