InGaAsP/InP buried crescent laser diode emitting at 1. 3 /sigma phi/m wavelength

Journal Article · Wed Aug 01 00:00:00 EDT 1984 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1984.1072495· OSTI ID:6219629

Oomura, E; Fujikawa, K; Higuchi, H; Hirano, R; Ikeda, K; Namizaki, H; Sakakibara, Y; Susaki, W

The fabrication procedure, designing of an active region and a p-n-p-n current blocking structure, characteristics and the aging results of an InGaAsP/InP buried crescent (BC) laser diode are described. The BC laser diodes exhibit high laser performances, such as a low-threshold current, a fundamental transverse mode oscillation with linear light output-current characteristics. CW operation at as high as 100/sup 0/ is achieved with a junction up configuration as a result of the improvement in the current blocking structure. A stable CW operation at 80/sup 0/C has been realized with a constant optical output power of 5 mW.

• Research Organization: LSI Research and Development Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo, Japan
• OSTI ID: 6219629
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-20:8; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CONFIGURATION
DESIGN
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
MEDIUM TEMPERATURE
OPTICAL MODES
OSCILLATION MODES
P-N JUNCTIONS
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POWER RANGE MILLI W
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
WAVELENGTHS