Position of the degradation and the improved structure for the buried crescent InGaAsP/InP (1. 3. mu. m) lasers

Journal Article · Fri Jul 15 00:00:00 EDT 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94275· OSTI ID:5967206

Hirano, R; Oomura, E; Higuchi, H; Sakakibara, Y; Namizaki, H; Susaki, W; Fujikawa, K

We have found a degradation of the buried crescent (BC) InGaAsP/InP lasers that occurs when the p-n junction plane coincides with the surface exposed in the high-temperature H/sub 2/ ambient before the melt contact during the liquid phase epitaxial growth. To eliminate the degradation, we have fabricated a new structure of the BC laser and have obtained stable cw operation at 80 /sup 0/C.

• Research Organization: LSI Research and Development Laboratory, Mitsubishi Electric Corporation, 4-1, Mizuhara, Itami, Hyogo, 664, Japan
• OSTI ID: 5967206
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 43:2; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CONFIGURATION
CRYSTAL GROWTH
ELECTROMAGNETIC RADIATION
EPITAXY
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFRARED RADIATION
JUNCTIONS
LASERS
LIQUIDS
MEDIUM TEMPERATURE
MELTING
P-N JUNCTIONS
PHASE TRANSFORMATIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STABILITY
SURFACES