Internal loss of InGaAsP/InP buried crescent (lambda = 1. 3. mu. m) laser
Journal Article
·
· Appl. Phys. Lett.; (United States)
The temperature dependence of the internal loss ..cap alpha.. of the InGaAsP/InP buried crescent laser is presented in the temperature range 20--80 /sup 0/C. ..cap alpha.. is about 18 cm/sup -1/, and no apparent temperature dependence of ..cap alpha.. is observed in this temperature range. This indicates that the temperature-sensitive behavior of the threshold current in InGaAsP/InP long-wavelength lasers is not due to the temperature dependence of internal loss. The decrease in the external quantum efficiency with increasing temperature is attributed to the decrease in the internal quantum efficiency.
- Research Organization:
- LSI Research and Development Laboratory, Mitsubishi Electric Corporation, 4-1, Mizuhara, Itami, Hyogo 664, Japan
- OSTI ID:
- 5143792
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 41:4; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
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Single-mode operation of 1. 3. mu. m InGaAsp/InP buried crescent lasers using a short external optical cavity
Journal Article
·
Fri Jul 15 00:00:00 EDT 1983
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5967206
1. 3. mu. m InGaAsP buried crescent lasers with cobalt-doped semi-insulating current blocking layers grown by metalorganic chemical vapor deposition
Journal Article
·
Mon Oct 03 00:00:00 EDT 1988
· Appl. Phys. Lett.; (United States)
·
OSTI ID:6777764
Single-mode operation of 1. 3. mu. m InGaAsp/InP buried crescent lasers using a short external optical cavity
Journal Article
·
Wed Feb 29 23:00:00 EST 1984
· IEEE J. Quant. Electron.; (United States)
·
OSTI ID:6317718
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CONFIGURATION
DATA
EFFICIENCY
ENERGY LOSSES
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
LOSSES
MEDIUM TEMPERATURE
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CONFIGURATION
DATA
EFFICIENCY
ENERGY LOSSES
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
LOSSES
MEDIUM TEMPERATURE
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE