Wide-band modulation of 1. 3 /mu/m InGaAsP buried crescent lasers with iron- and cobalt-doped semi-insulating current blocking layers

Journal Article · Thu Jun 01 00:00:00 EDT 1989 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/3.29268· OSTI ID:5940445

Cheng, W H; Huang, S Y; Appelbaum, A; Pooladdej, J; Buehring, K D; Wolf, D; Renner, D S; Hess, K L; Zehr, S W

The current-voltage characteristics of iron (Fe) and cobalt (CO)-doped semi-insulating InP layers grown by low-pressure metalorganic chemical vapor deposition (LPMOCVD) have been investigated experimentally. Resistivity of 10/sup 8/ /Omega/ cm (Fe) and 10/sup 5/ /Omega/ cm (Co), critical voltage of 50 V (Fe) and 40 V (Co), and trap concentration of 3.3 x 10/sup 15//cm/sup 3/ with n-type conductivity (Fe) and 2.7 x 10/sup 15//cm/sup 3/ with p-type conductivity (Co) are obtained. The performance characteristics of 1.3 /mu/m InGaAsP semi-insulating buried crescent (SIBC) lasers with Fe and Co-doped InP current blocking layers are compared. Threshold currents as low as 10 mA (Fe) and 8 mA (Co) at room temperature, total differential quantum efficiency of 60 percent, high-temperature operation up to 100/sup 0/C, high-power output of 42 mW/facet (Fe) and 30 mW/facet (Co), and a 3-dB modulation bandwidth of 11 GHz have been achieved. These results indicate that both Fe and Co-doped InP layers grown by LPMOCVD provide effective current confinement for high-performance SIBC lasers. A detailed model based on experimental data for SIBC lasers is also presented for the analysis of intrinsic and parasitic effects on the frequency response of the lasers. The model is then used to design lasers with larger modulations bandwidth.

• Research Organization: Network Transmission Systems Div., Rockwell International Corp., Dallas, TX (US); Rockwell International Corp., Thousand Oaks, CA (USA). Science Center
• OSTI ID: 5940445
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 25:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COBALT
CURRENT DENSITY
DATA
DATA ANALYSIS
DEPOSITION
DESIGN
DOPED MATERIALS
EFFICIENCY
ELEMENTS
EXPERIMENTAL DATA
FREQUENCY MODULATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
IRON
LASER MATERIALS
LASERS
LOW PRESSURE
MATERIALS
METALS
MODULATION
NUMERICAL DATA
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE COATING
TRANSITION ELEMENTS