InGaAsP laser with semi-insulating current confining layers

Journal Article · Mon Jun 09 04:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96871· OSTI ID:5628471

Dutta, N K; Zilko, J L; Cella, T; Ackerman, D A; Shen, T M; Napholtz, S G

The fabrication and performance characteristics of a InGaAsP laser structure with semi-insulating current confining layers are reported. The semi-insulating layers are Fe-doped InP and are grown using the metalorganic chemical vapor deposition growth technique. The lasers have threshold currents in the range 20--30 mA and external differential quantum efficiency approx.0.2 mW/mA/facet at 30/sup 0/C. The bandwidth for small-signal response is approx.2 GHz which suggests that the laser structure is suitable for high bit rate lightwave transmission systems. Initial aging results yield an estimated operating lifetime of 10 years at 20/sup 0/C.

• Research Organization: AT and T Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 5628471
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:23; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
EFFICIENCY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING