Influence of nonradiative recombination on laser characteristics of double InGaAsP heterostructures

Journal Article · Fri May 01 04:00:00 EDT 1981 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:6121688

Garbuzov, D Z; Gorelenok, A T; Chalyi, V P; Usikov, A S

An investigation was made of the external quantum efficiency of radiative recombination on the rate of excitation of double heterostructures in the InGaAsP system. At 300 /sup 0/K there was a correlation between the threshold currents and the internal quantum efficiency eta/sub i/ of the material of the active region of the investigated heterostructures. It was found that at 77 /sup 0/K the value of eta/sub i/ for the laser diodes approached 100% and the threshold current densities were governed by other factors. Properties of nonradiative recombination channels in the active regions of InGaAsP heterostructures were analyzed.

• Research Organization: A. F. Ioffe Physicotechnical Institute, Academy of Sciences of the USSR, Leningrad
• OSTI ID: 6121688
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 15:5; ISSN SPSEA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
CHARGE CARRIERS
CORRELATIONS
EFFICIENCY
ENERGY-LEVEL TRANSITIONS
EXCITATION
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
LASERS
LOW TEMPERATURE
LUMINESCENCE
MEDIUM TEMPERATURE
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS