CdS induced homojunction formation in crystalline p-CuInSe/sub 2/

Journal Article · Sun Jan 18 23:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97647· OSTI ID:6870902

Matson, R J; Noufi, R; Bachmann, K J; Cahen, D

The deposition of CdS onto single-crystal p-CuInSe/sub 2/ (at a substrate temperature of 200 /sup 0/C) results in a CuInSe/sub 2/ homojunction rather than the expected heterojunction. Junction depths, varying from 1 to 9 ..mu..m, correlated well with the free-carrier concentration of the sample crystals. The junction depths were measured by electron-beam-induced current line scans of cleaved junctions and were corroborated by quantum efficiency measurements. All the materials deposited to date (CdS, Cd, Au, and Mo) have resulted in type conversion of the CuInSe/sub 2/. The experimental evidence for this type conversion is presented and possible defect chemical origins identified.

• Research Organization: Solar Energy Research Institute, Golden, Colorado 80401
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6870902
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 50:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
360603* -- Materials-- Properties
ATOM TRANSPORT
CADMIUM COMPOUNDS
CADMIUM SELENIDES
CARRIER DENSITY
CHALCOGENIDES
COPPER COMPOUNDS
COPPER SELENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CURRENTS
DIFFUSION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CURRENTS
EQUIPMENT
FABRICATION
FILMS
HOMOJUNCTIONS
INDIUM COMPOUNDS
INDIUM SELENIDES
JUNCTIONS
NEUTRAL-PARTICLE TRANSPORT
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
QUANTUM EFFICIENCY
RADIATION TRANSPORT
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
THIN FILMS
TRANSITION ELEMENT COMPOUNDS