Very low-threshold V-channeled substrate inner stripe lasers using high-resistive Al/sub 0. 85/Ga/sub 0. 15/As burying layer

Journal Article · Wed Apr 15 04:00:00 EDT 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.337812· OSTI ID:6865147

Yamamoto, S; Hijikata, T

A new V-channeled substrate inner stripe laser with a very low-current threshold has been devloped using a high-resistive Al/sub 0.85/Ga/sub 0.15/As burying layer. An optical waveguide is formed by making use of a V channel on the substrate in the mesa. Very low-current thresholds (I/sub th/ = 10--15 mA, J/sub th/ = 1 kA/cm/sup 2/) and stable fundamental transverse mode operation up to 30 mW are achieved even for the structure with broad active-layer widths (5--6 ..mu..m). Little degradation is observed over 3000 h at 50 /sup 0/C.

• Research Organization: Central Research Laboratories, Sharp Corporation, Tenri, Nara 632, Japan
• OSTI ID: 6865147
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 61:8; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENT DENSITY
CURRENTS
DATA
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
OPERATION
PHYSICAL PROPERTIES
PNICTIDES
POWER
POWER RANGE MILLI W
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
WAVEGUIDES