Twin-stripe injection laser with leaky-mode coupling

Journal Article · Sat Nov 15 04:00:00 EST 1980 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91779· OSTI ID:6764324

Ackley, D; Engelmann, R

A new twin-stripe leaky-mode (TLM) injection laser has been demonstrated. The structure consists of two nominally 2-..mu..m-wide stripes on 24-..mu..m centers in a buried-heterostructure configuration (produced by mesa-etching a three-layer double heterostructure and buried with an AlGaAs layer). By adjusting the mole fraction of Al in the burying layer, a negative-index step is produced at the lateral stripe boundary. Thus a substantial fraction of laser power leaks into the low-loss waveguide region between the stripes, and strong stripe coupling is observed. The far field consists of two collimated (divergence approx.1/sup 0/) beams characteristic of leaky-mode operation that are stable to pulsed drive current as high as 6I/sub th/. Linear output characteristics are observed to powers greater than 150 mW.

• Research Organization: Hewlett-Packard Laboratories, Palo Alto, California 94304
• OSTI ID: 6764324
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 37:10; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CONFIGURATION
COUPLING
DATA
ETCHING
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
LAYERS
NUMERICAL DATA
OPTICAL PROPERTIES
OSCILLATION MODES
PHYSICAL PROPERTIES
PNICTIDES
PULSES
QUANTITY RATIO
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STABILITY
SURFACE FINISHING
WAVEGUIDES