Chemical perspectives of microelectronic materials

Conference · Sat Dec 31 23:00:00 EST 1988

OSTI ID:6861026

Gross, M E ^[1]; Jasinski, J M ^[2]; Yates, J T ^[3]

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1. AT and T Bell Labs., Murray Hill, NJ (USA)
2. International Business Machines Corp., Yorktown Heights, NY (USA). Thomas J. Watson Research Center
3. Pittsburgh Univ., PA (USA)

The papers in the proceedings presented in this book are organized roughly by material system or chemical process, e.g. aluminum deposition, chemical vapor deposition mechanisms, silicon surface chemistry, novel precursors for metallization and compound semiconductors. One common theme throughout is the close relationship between gas phase, surface, and cluster chemistry. Reports on syntheses of novel organometallic precursors containing tailored leaving groups to deposit pure metal complemented mechanistic studies of chemical vapor deposition processes that address issues of deposit purity are presented, as are studies of reactions at clean silicon surfaces related to such microelectronics processing issues as deposition, etching, oxidation, and nitridation. Modelling of deposition reactions and the effect of reactor configuration on these mechanisms are discussed.

• OSTI ID: 6861026
• Report Number(s): CONF-8811223--; CNN: N0014-89-J-1302; ISBN: 1-55899-004-6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
ABSTRACTS
CHEMICAL REACTION KINETICS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DEPOSITION
DOCUMENT TYPES
EPITAXY
KINETICS
LEADING ABSTRACT
MATERIALS
MATHEMATICAL MODELS
MICROELECTRONICS
REACTION KINETICS
SEMICONDUCTOR MATERIALS
SYNTHESIS