Chemical perspectives of microelectronic materials. 2

Conference · Mon Dec 31 23:00:00 EST 1990

OSTI ID:5639394

Interrante, L U ^[1]; Jensen, K F ^[2]; Dubois, L H; Gross, M E ^[3]

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1. Rensselaer Polytechnic Inst., Troy, NY (United States)
2. Massachusetts Inst. of Tech., Cambridge, MA (United States)
3. AT and T Bell Labs., Murray Hill, NJ (United States)

The organization of this volume reflects that of the symposium itself with groupings by materials, rather than by techniques. Thus, we start off with a section on GaAs surface chemistry that includes surface chemistry relevant to the deposition of GaAs, as well as chemistry related to etching processes. This is followed by a section on precursors for compound semiconductor MOCVD which highlights recent research on wide range of organometallic systems designed for use in III-V, IV-IV, and II-VI deposition processes. The third section centers on chemical and chemical processing-related issues involved in compound semiconductor growth and etching, including studies of impurity incorporation and doping and the modeling of the CVD and PECVD reactor environments. The deposition and surface chemistry of silicon is the main subject of the fourth section. The final two sections cover the chemistry of new precursors designed for use in the deposition of a variety of other materials used in microelectronics processing, with metals, oxides and nitrides being the particular focus of attention.

• OSTI ID: 5639394
• Report Number(s): CONF-901105--; ISBN: 1-55899-096-8
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201 -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400101 -- Activation
Nuclear Reaction
Radiometric & Radiochemical Procedures
ABSTRACTS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL REACTION KINETICS
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DOCUMENT TYPES
ELEMENTS
ETCHING
FABRICATION
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTERFACES
KINETICS
LEADING ABSTRACT
MASS SPECTRA
MEETINGS
MICROELECTRONICS
MULTIPOLES
NITRIDES
NITROGEN COMPOUNDS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
PRECURSOR
QUADRUPOLES
REACTION KINETICS
SEMIMETALS
SILICON
SPECTRA
SURFACE COATING
SURFACE FINISHING
THIN FILMS
X-RAY SPECTRA