Proceedings of the twelfth international symposium on chemical vapor deposition
- Massachusetts Inst. of Tech., Cambridge (United States)
- David Sarnoff Research Center, Princeton, NJ (United States); eds.
The technical content of the meeting continues to demonstrate the broad scope of CVD technology, with topics ranging from fundamental chemistry studies; through microelectronic and photonic applications of semiconductors, dielectrics and metals; to protective coatings and ceramic composites. Efforts in CVD of elemental semiconductors continues to focus on deposition of Si[sub 1 [minus] x]Ge[sub x] in ultraclean systems to realize the materials needed for the next generation of Si microelectronics technology. For organometallic CVD of compound semiconductors, the complex interaction of precursor chemistry and materials properties is beginning to be understood to the point where precursors may be selected and synthesized to optimize electronic and optical properties of the deposited layers. CVD of tungsten continues to be an active area of research in CVD metallization. In addition, new developments in aluminum and copper sources have brought renewed interest to CVD of those metals. CVD of high T[sub c] superconductors has also become an integral part of CVD conductor technology. In addition to continued efforts on the development of conventional silicon oxide and nitride dielectrics, there is renewed interest in deposition of ferroelectric materials for nonvolatile memory and optical applications. This latter effort is tied to the development of new organometallic precursors for related high T[sub c] superconducting oxides. Finally, applications of CVD in protective coatings and in structural ceramic-ceramic composites have increased to a significant portion of the CVD field. The latter application, known as chemical vapor infiltration, allows for densification of high-temperature film reinforced borides, carbides and nitrides. The technique is also finding new application in the fabrication of ceramic membranes for gas separations. Papers have been processed separately for inclusion on the data base.
- OSTI ID:
- 6265856
- Report Number(s):
- CONF-930571--; ISBN: 1-56677-074-2
- Country of Publication:
- United States
- Language:
- English
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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201* -- Chemical & Physicochemical Properties
ABSTRACTS
ALLOYS
ALUMINIUM
CERAMICS
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL REACTION KINETICS
CHEMICAL REACTORS
CHEMICAL VAPOR DEPOSITION
COATINGS
COMPOSITE MATERIALS
COPPER
CRYSTAL DOPING
DEPOSITION
DIELECTRIC MATERIALS
DOCUMENT TYPES
ELEMENTS
FERROMAGNETIC MATERIALS
GERMANIUM ALLOYS
HIGH-TC SUPERCONDUCTORS
KINETICS
LEADING ABSTRACT
MAGNETIC MATERIALS
MATERIALS
MATHEMATICAL MODELS
MEETINGS
METALS
NITRIDES
NITROGEN COMPOUNDS
NUCLEATION
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
PRECURSOR
PROTECTIVE COATINGS
REACTION KINETICS
SEMICONDUCTOR MATERIALS
SILICON ALLOYS
SILICON COMPOUNDS
SILICON NITRIDES
SILICON OXIDES
SPECTROSCOPY
SUPERCONDUCTORS
SURFACE COATING
SURFACE PROPERTIES
TECHNOLOGY ASSESSMENT
TRANSITION ELEMENTS
TUNGSTEN