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Chemical vapor deposition of silicon nitride. I. Oxygen contamination

Conference ·
OSTI ID:5897588

Silicon nitride films are important to the microelectronics industry for their use as diffusion and passivation barriers, as well as in the development of non-volatile memories. In this work, the effects of oxygen contamination on the chemical vapor deposition of silicon-nitride are reported. The changes in deposition rate, etch rate, and refractive index are measured. From this data suitable process conrols can be established.

Research Organization:
Sandia Labs., Albuquerque, NM (USA)
DOE Contract Number:
EY-76-C-04-0789
OSTI ID:
5897588
Report Number(s):
SAND-79-0097C; CONF-791017-4
Country of Publication:
United States
Language:
English